Gallium Nitride (GaN) based high electron mobility
transistor (HEMT) has been considered as the
next-generation device technology for high-fequency
/high-power and high-speed/high-voltage applications. It
offers superior performance over silicon-based devices,
such as higher mobility, higher breakdown voltage, and
higher per-width power density, and are more
environmentally fiendly than GaAs devices 1. As the
industry continues to advance the GaN HEMT
technology, the need for advanced device models has
become increasingly clear.
High-speed/high-voltage applications (such as power
switching) and high-fequency/high-power applications
(such R power amplifers) impose distinct requirements
for device models. For the former, a GaN HEMT is
typically accompanied with a datasheet that provides key
characteristics. The key characteristics usually include
electrical ratings (such as maximum voltage, current,
temperature), static characteristics (such as threshold
voltage, specifc drive currents, ON-resistance), dynamic
characteristics (such as input and output capacitances, gate
charge), switching characteristics (such as switching
energy, delays), and thermal properties. Some technology
providers may also supply a behavioral model that largely
replicates the datasheet information, and makes it
somewhat easier to design a circuit/system around the
device. More physical models, however, are desired in
order to include other aspects of device characteristics
and/or to enable additional circuit analysis, such as
electro-thermal co-simulation and comer analysis. Such
models can also be usefl to aid manufacturing technology


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